Magnéli Vanadium Oxides

A. Rúa, A. Bartenev, A. D. Reyes-Diaz, Y. Rivera-Robles, K. Kisslinger, and F. Camino
Appl. Phys. Lett. 129, 021906 (2026)
Crystallographic registry in epitaxial V₃O₅ thin films
Establishes a  crystallographic registry in epitaxial V₃O₅ on c-cut Al₂O₃, with discrete in-plane orientations imposed by the substrate symmetry.

A. Rúa, A. Bartenev, A. D. Reyes-Diaz, J. L. Guerra-Acosta, K. Kisslinger, and F. Camino
J. Appl. Phys. 140, 045303 (2026)
Epitaxial registry and transport properties in V₄O₇ thin films
Shows that epitaxial registry and improved crystallographic order strongly modify the conductivity scale while leaving the transition temperature near 244 K.

Md S. Islam, A. Pofelski, Y. Rivera-Robles, K. Kisslinger, F. Camino, A. Rúa
J. Appl. Phys. 139, 104502 (2026)
Superlattice Reflection Signatures of the Insulator–Metal Transition in V₃O₅ Thin Films

F. E. Camino, A. Gutierrez, A. G. Huerfano-Ramos, J. L. Guerra-Acosta, M. Lu, and A. Rúa
J. Appl. Phys. 140, 015105 (2026)
Quadratic magnetoresistance across the insulator–metal transition in V₄O₇ thin films
Shows that substrate-controlled crystallographic registry strongly affects the resistivity scale, while the quadratic magnetotransport response remains similar across the insulator–metal transition.

A. Rúa, M. Lozano, F. Camino, S. Nandi, R. G. Elliman
J. Appl. Phys. 139, 185102 (2026)
Nonlinear electrical transport near the metal–insulator transition in V₄O₇ thin films
Demonstrates nonlinear transport and threshold-switching behavior near the metal–insulator transition in V₄O₇ thin films.

C. Verbel, A. Bartenev, M. Lozano, F. Camino, R. A. Rodríguez-Solís, and A. Rúa
J. Appl. Phys. 137, 234504 (2025)
High-frequency electrical behavior in V₃O₅ thin films
Reports the first radio-frequency characterization of V₃O₅ devices from 5 to 35 GHz across the metal–insulator transition.

A. Bartenev, C. Verbel, Q. Wu, F. Camino, A. Rúa, and S. Lysenko
Adv. Electron. Mater. 11, 2400539 (2025)
Photoinduced Melting of V₄O₇ Correlated State
Shows that ultrafast optical excitation drives the insulator–metal transition in V₄O₇ by melting the correlated electronic state.

S. K. Das, S. K. Nandi, C. V. Marquez, A. Rúa, M. Uenuma, E. Puyoo, S. K. Nath, D. Albertini, N. Baboux, T. Lu, Y. Liu, T. Haeger, R. Heiderhoff, T. Riedl, T. Ratcliff, and R. G. Elliman
Adv. Mater. 35, 2208477 (2023)
Physical Origin of Negative Differential Resistance in V₃O₅ and Its Application as a Solid-State Oscillator
Reports electroforming-free threshold switching and negative differential resistance in V₃O₅, with relaxation oscillations and synchronization of coupled devices.

Devices and Neuromorphic Systems

S. K. Nath, S. K. Das, S. K. Nandi, C. Xi, C. V. Marquez, A. Rúa, M. Uenuma, Z. Wang, S. Zhang, R.-J. Zhu, J. Eshraghian, X. Sun, T. Lu, Y. Bian, N. Syed, W. Pan, H. Wang, W. Lei, L. Fu, L. Faraone, Y. Liu, and R. G. Elliman
Adv. Mater. 36, 2400904 (2024)
Optically Tunable Electrical Oscillations in Oxide-Based Memristors for Neuromorphic Computing
Demonstrates direct optical control of V₃O₅-based relaxation oscillators and their application to neuromorphic computing.

A. Bonagiri, S. K. Das, C. V. Marquez, A. Rúa, E. Puyoo, S. K. Nath, D. Albertini, N. Baboux, M. Uenuma, R. G. Elliman, and S. K. Nandi
ACS Appl. Mater. Interfaces 16, 31283 (2024)
Biorealistic Neuronal Temperature-Sensitive Dynamics within Threshold Switching Memristors: Toward Neuromorphic Thermosensation
Uses temperature-dependent V₃O₅ threshold switching to reproduce thermosensitive neuronal dynamics and demonstrate neuromorphic thermal sensing.

S. K. Das, S. K. Nandi, C. V. Marquez, A. Rúa, M. Uenuma, S. K. Nath, S. Zhang, C.-H. Lin, D. Chu, T. Ratcliff, and R. G. Elliman
Adv. Intell. Syst. 6, 2400191 (2024)
Dynamics of Leaky Integrate-and-Fire Neurons Based on Oxyvanite Memristors for Spiking Neural Networks
Demonstrates leaky integrate-and-fire behavior in V₃O₅ memristors, including excitatory and inhibitory spiking and coupled-neuron dynamics.

Canonical MIT Systems (VO₂, V₂O₃)

I. A. Mogunov, S. Lysenko, A. E. Fedianin, F. E. Fernández, A. Rúa, A. J. Kent, A. V. Akimov, and A. M. Kalashnikova
Nat. Commun. 11, 1690 (2020)
Large non-thermal contribution to picosecond strain pulse generation using the photo-induced phase transition in VO₂
Shows that the photo-induced phase transition in VO₂ generates a large non-thermal strain contribution that exceeds the thermoelastic response.

I. A. Mogunov, S. Lysenko, F. Fernández, A. Rúa, A. V. Muratov, A. J. Kent, A. M. Kalashnikova, and A. V. Akimov
Phys. Rev. Mater. 4, 125201 (2020)
Photoelasticity of VO₂ nanolayers in insulating and metallic phases studied by picosecond ultrasonics
Determines the photoelastic response of VO₂ in its insulating and metallic phases and shows a marked change across the metal–insulator transition.

A. Rúa, K. Echeverría, B. Ayala, G. A. Goenaga, S. Lysenko, and F. E. Fernández
J. Appl. Phys. 124, 205301 (2018)
Toward reproducible metal-insulator transition characteristics in V₂O₃ thin films sputter-deposited on glass
Shows that post-deposition thermal treatment reduces sample-to-sample variations in the metal–insulator transition of sputtered V₂O₃ thin films.